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Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
D u ty Cycle = 0.5
0.5
0.2
0.1
0.1
N otes:
P DM
0.05
t 1
t 1
0.02
Single P u lse
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 120 °C/ W
3. T JM – T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
D u ty Cycle = 0.5
1
0.5
0.2
0.1
0.1
0.05
0.02
Single P u lse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73793 .
www.vishay.com
6
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
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